D5V0L1B2T-7【PDF 2/4 页】TVS DIODE 5V 1CH BI SOD523

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D5V0L1B2T

Maximum Ratings @T A = 25°C unless otherwise specified

Characteristic

Peak Pulse Power Dissipation

Peak Pulse Current

ESD Protection – Contact Discharge

ESD Protection – Air Discharge

Symbol

P PP

I PP

V ESD_Contact

V ESD_Air

Value

84

6

±30

±30

Unit

W

A

kV

kV

Conditions

8/20 μ s, per Fig. 2

8/20 μ s, per Fig. 2

IEC 61000-4-2 Standard

IEC 61000-4-2 Standard

Thermal Characteristics

Characteristic

Package Power Dissipation (Note 6)

Thermal Resistance, Junction to Ambient (Note 6)

Operating and Storage Temperature Range

Symbol

P D

R θ JA

T J , T STG

Value

150

833

-65 to +150

Unit

mW

° C/W

° C

Electrical Characteristics @T A = 25°C unless otherwise specified

Characteristic

Reverse Standoff Voltage

Channel Leakage Current (Note 7)

Symbol

V RWM

I RM

Min

-

-

Typ

-

10

Max

5

100

Unit

V

nA

Test Conditions

-

V RWM = 5V

-

7.0

9.0

I PP = 1A, tp = 8/20 μ S

Clamping Voltage, Positive Transients

V CL

-

-

8.7

10.5

10.7

12.0

V

I PP = 3A, tp = 8/20 μ S

I PP = 5A, tp = 8/20 μ S

-

11.5

14.0

I PP = 6A, tp = 8/20 μ S

Breakdown Voltage

Differential Resistance

Channel Input Capacitance

V BR

R DIF

C IN

6

-

-

7

0.2

15

8

-

20

V

?

pF

I R = 1mA

I R = 1A, tp = 8/20 μ S

V R = 0V, f = 1MHz

Notes:

6. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at

http://www.diodes.com.

7. Short duration pulse test used to minimize self-heating effect.

100

100

75

50

50

25

0

0

25

50

75 100 125

150

175 200

0

0

20

40

60

T A , AMBIENT TEMPERATURE (°C)

Fig. 1 Power Dissipation vs. Ambient Temperature

t, TIME ( μ s)

Fig. 2 Pulse Waveform

D5V0L1B2T

Document number: DS35597 Rev. 5 - 2

2 of 4

June 2012

? Diodes Incorporated

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